Reduction of native oxides on GaAs during atomic layer growth of Al2O3
نویسندگان
چکیده
The reduction of surface “native” oxides from GaAs substrates following reactions with trimethylaluminum TMA precursor is studied using medium energy ion scattering spectroscopy MEIS and x-ray photoelectron spectroscopy XPS . MEIS measurements after one single TMA pulse show that 65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers. © 2009 American Institute of Physics. DOI: 10.1063/1.3148723
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